溶胶-凝胶旋涂法制备In-N共掺ZnO薄膜及其光学性能研究

The Optical Properties of In-N Co-doped ZnO Thin Films Prepared by Sol-Gel Spin Coating

ZnO是目前使用广泛的半导体材料,但本征ZnO存着在一定的缺陷,现通过溶胶-凝胶旋涂法分别以乙酸锌(Zn(CH_(3)COO)_(2)·2H_(2)O)为锌源、硝酸铟(In(NO 3)_(3)·H_(2)O)为铟源、氯化铵(NH_(4)Cl)为氮源制备了In-N共掺的ZnO薄膜,由此来改善其相关性能。所制备样品的晶格结构、表面形貌、光学透过率及光学带隙分别通过X射线衍射仪(XRD),扫描电子显微镜(SEM)和紫外-可见分光光度计(UV-Vis)来进行表征和分析。结果表明:随着N掺杂量的增加,In-N共掺ZnO薄膜的结晶度有了明显的改善,晶粒大小均匀且尺寸逐渐减小,光透过率逐渐增加,相比于单掺样品禁带宽度减小。当N掺杂量为8.0 at%时,ZnO薄膜的晶粒尺寸及分布最为均匀、表面平整、光透过率达90%、禁带宽度轻微减小,所形成的薄膜质量最好。

ZnO is a widely used semiconductor material at present,but the intrinsic ZnO exists certain defects.In-N co-doped ZnO films were prepared by sol-gel spin coating using zinc acetate(Zn(CH_(3)COO)_(2)·2H_(2)O)as the source of zinc,indium nitrate(In(NO_(3))_(3)·H_(2)O)as the source of indium and ammonium chloride(NH 4Cl)as the source of nitrogen,so as to improve the relevant properties.The crystal lattice structure,surface morphology,optical transmittance and optical band gap of the prepared samples were characterized and analyzed by X-ray diffraction(XRD),scanning electron microscopy(SEM)and UV-Vis.The results show that with the increase of N doping,the crystallinity of the In-N co-doped ZnO film is significantly improved,the grain size is uniform and the size decreases gradually,the transmittance increases gradually,and the band gap width decreases compared with that of the single doped sample.When the N doping amount is 8.0 at%,the grain size and distribution of ZnO film are the most uniform,the surface is flat,the transmittance is up to 90%,the band gap width is slightly reduced,and the film formed is of the best quality.