WO_(3)薄膜电致变色器件的响应时间测试及其改善方案

WO_(3)Measuring and improving response time of WO_(3)thin film electrochromic devices

电致变色(Electrochromism,EC)器件,具有工作电压低、多稳态、静态无功耗、变色功耗低、透光度/反射度连续可调等特点。WO_(3)制作的电致变色器件存在响应时间过长、光学调制幅度较低等问题。为了能够进一步缩短响应时间,本文使用WO_(3)作为变色层的材料并制备电致变色器件,研究了不同氩氧流量比下对WO_(3)薄膜的影响以及对响应时间的影响,且以Ag-WO_(3)复合层作为变色层的改进方案来制备电致变色器件,研究其对响应时间的影响。研究表明当氩氧流量比为50∶50时,WO_(3)薄膜制备的电致变色器件的响应时间最短,着色响应时间与褪色响应时间分别为21.27 s与11.68 s;Ag-WO_(3)复合薄膜制作的电致变色器件,当Ag层厚度为6 nm时,两种响应时间最小,着色响应时间与褪色响应时间分别为12.71 s和7.89 s。WO_(3)薄膜制作的电致变色器件,在不同氩氧流量比下器件的响应时间受到影响;Ag-WO_(3)复合薄膜制作的电致变色器件响应时间与用WO_(3)制作的器件相比明显缩短,但是当Ag层厚度增加时,器件的响应时间随之增加。

Electrochromic(EC)devices possess the advantages of low operating voltage,many stable states,non power consumption under static state,low power consumption for color change and continuously adjustable transmittance/reflectance and so on.WO_(3)electrochromic devices have problems such as long response time and low optical modulation amplitude.In order to further shorten the response time,this article uses WO_(3)film as the color changing layer to prepare electrochromic devices.The effect of different argon-oxygen flow ratios on the WO_(3)film deposition and the response time of EC devices are studied.In order to further shorten response time,we used the Ag-WO_(3)composite layer as the color-changing layer for the EC devices.The results show,when the argon-oxygen flow ratio is at 50∶50,the response time of the EC devices prepared only by the WO_(3)film is the shortest.The coloring time and the fading response time are 21.27 s and 11.68 s respectively.When the EC devices were using the Ag-WO_(3)composite film as the color-changing layer and the Ag layer thickness is 6 nm,the two response times are the shortest.The coloring time and the fading response time are 12.71 s and 7.89 s respectively.The response time of the EC devices prepared by WO_(3)film is influenced on different argon-oxygen flow ratios.Moreover,the response time of the EC devices prepared by Ag-WO_(3)composite film is significantly shorter than that of the devices made by WO_(3)film.However,when the Ag layer thickness increases,the response time of the devices also increases.