InGaAs/InP台面型pin高速光电探测器

InGaAs/InP Mesa pin High-Speed Photodetector

介绍了一种应用于5G通信系统的高速光电探测器,设计了InP基台面型pin高速光电探测器材料结构,通过理论计算及软件模拟得到响应度和带宽随耗尽层厚度的变化规律,并对材料结构进行优化。制备了光敏面直径为20μm及耗尽层厚度分别为1.0、1.3和1.5μm的器件。对比响应度和带宽的理论值与实测值,结果表明实测值与理论值相符,当耗尽层厚度为1.3时响应度可达到0.89A/W,带宽可达23GHz以上,可满足25Gibit/s的传输速率要求。建立了探测器小信号模型对器件的带宽特性进行仿真,仿真结果与理论值一致,进一步验证理论分析的正确性。

A high-speed photodetector used in 5G communication system was introduced.The material structure of an In Pbased-mesa pin high-speed photodetector was designed.The variation laws of the responsivity and bandwidth with the depletion layer thickness were obtained by theoretical calculation and software simulation,and the material structure was optimized.The devices with a photosensitive surface diameter of 20μm and depletion layer thickness of 1.0,1.3 and 1.5μm were fabricated.The theoretical and measured values of the responsivity and bandwidth were compared.The result shows that the measured values agree with the theoretical values.When the depletion layer thickness is 1.3μm,the responsivity can reach 0.89 A/W and the bandwidth can be up to 23 GHz,which can meet the transmission rate requirement of 25 Gibit/s.The small signal model of the detector was established to simulate bandwidth characteristics of the device.The simulation result is consistent with the theoretical value,which further verifies the correctness of the theoretical analysis.