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MEMS微同轴宽带功分器 被引量:1

MEMS Micro Coaxial Broadband Power Divider
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摘要 随着微波系统大功率、超宽带的发展,对功率分配/合成结构的性能提出了更高的要求,超宽带、低损耗、小尺寸、易于集成的功分器成为研究热点。基于微电子机械系统(MEMS)工艺的微同轴射频传输线具有超宽带、无色散、低损耗和高隔离度等特点,使用微同轴工艺制备的功分器具有超宽带、低损耗、易于集成、小型化和可移植性好等特点。仿真并制作了一款微同轴一分二功分器。测试结果表明,在6~18GHz内插入损耗小于0.3dB,功分器体积为3mm×5.85mm×0.5mm,功率容量不小于100W。通过包金带的方式装配了功分器的背靠背结构。测试结果表明,背靠背结构损耗与预期损耗相符。为微同轴功分器在100W有源功放组件中的应用奠定了基础。 With the development of high power and ultra-wideband of the microwave system,the higher performance of the power distribution/synthesis structure is required.The power divider with the characteristics of ultra-wideband,low loss,small size and easy integration has become the research focus.The micro coaxial RF transmission line based on micro-electromechanical system(MEMS)process has the characteristics of ultra-wideband,non-dispersion,low loss and high isolation.The power divider fabricated by micro coaxial process has the characteristics of ultra-wideband,low loss,easy integration,miniaturization and good portability.A micro coaxial two-way power divider was simulated and fabricated.The measured result shows that the insertion loss is less than 0.3 dB in 6-18 GHz.The volume of the power divider is 3 mm×5.85 mm×0.5 mm,and the power capacity is not less than 100 W.The back-to-back structure of the power divider was assembled by means of gold belt.The test result shows that the loss of the back-to-back structure is consistent with the expectation value.It lays a foundation for the application of the micro coaxial power divider in 100 W active power amplifier module.
作者 李康禾 李宏军 杨强 王建 史光华 Li Kanghe;Li Hongjun;Yang Qiang;Wang Jian;Shi Guanghua(The 13^(th)Research Institute,China Electronics Technology Group Corporation,Shijiazhuang 050051,China)
出处 《微纳电子技术》 CAS 北大核心 2021年第3期238-243,共6页 Micronanoelectronic Technology
关键词 微同轴 功分器/合成器 微电子机械系统(MEMS) 超宽带 小型化 micro coaxial power divider/synthesizer micro-electromechanical system(MEMS) ultra-wideband miniaturization
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  • 1吕文龙,陈义华,孙道恒.微电铸及其在MEMS中的应用[J].厦门大学学报(自然科学版),2005,44(B06):316-318. 被引量:4
  • 2沈广平,秦明.MEMS传感器的封装[J].电子工业专用设备,2006,35(5):28-35. 被引量:7
  • 3徐建民.正多边形外导体-圆形内导体同轴传输线特性阻抗的计算[J].电子科学学刊,1989,11(6):621-524. 被引量:1
  • 4REBEIZ G M, MULDAVIN J B. RF MEMS switches and switch circuits [J]. IEEE Microwave Magazine, 2001, 2 (4) : 59 - 71.
  • 5KATEHI L P B, HARVEY J F, BROWN E. MEMS and S micromachined circuits for high frequency applications [J]. IEEE Transactions on Microwave Theory and Techniques 2002, 50 (3): 858-866.
  • 6KANNAN H, LAKSHMINARAYANAN B, WELLER T M. Multi finger RF MEMS variable capacitors for RF applications [C] // Proceedings of the 34^th European Microwave Conference. Amsterdam, Holland, 2004:717 - 720.
  • 7RIJKS G S M, STEENEKEN P G, van BEEK J T M, et al. Microelectromechanical tunable capacitors for reconfigurahle RF architectures [J]. Journal of Micromechanics and Microengineering, 2006, 16 (3): 60l- 611.
  • 8POPOVIC Z. Micro-coaxial micro-fabricated feeds for phased array antennas [C] // Proceedings of tbe IEEE International Symposium on Phased Array Systems and Technology. Massa ehusetts, USA, 2010: 12- 15.
  • 9KIDO H, UTSUMI Y C. Application of photo-etching of polytetrafluoroethylene induced by high energy synchrotron radiation to LIGA [J]. Microsystem Technologies, 2013, 19 (3) : 301 - 304.
  • 10YANG R, WANG W J. A numerical and experimental study on gap compensation and wavelength selection in UV-litho graphy of ultra-high aspect ratio SU - 8 microstructures [J]. Sensors and Actuators: B, 2005, 110 (2): 279-288.

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