摘要
GaN基LED芯片具有制备工艺简单、低成本、良率高等优点,提高LED芯片的出光效率已成为国内外专家的研究重点。采用tracepro软件,并基于蒙特卡洛法对ITO表面具有微孔结构的LED芯片的光萃取效率进行模拟仿真,相比ITO层没有微孔结构的LED芯片,有微孔结构的LED芯片的光萃取效率有明显的提升。通过光刻技术和湿法蚀刻技术制备ITO厚度为30 nm的LED芯片,在ITO层制作周期微结构。通过光电性检测,在通入20 m A电流时,相比ITO层没有微孔结构的LED芯片,有微孔结构的LED芯片样品的输出光功率分别提高3.9%、6.76%和4.66%,并在此基础上优化了的电极结构,使电流密度分布均匀得到有效提升。
The GaN-based light-emitting diodes(LED)have been comprehensively studied because of the benefits of easy preparation,reasonable cost and high production.The Monte Carlo method was simulated the light extraction efficiency of GaN-based LED chips by Tracepro software.The simulation of LED chips results shows that the micropore structure availably promotes the light output efficiency of LED chips.LED chips of the ITO layer with a thickness of 30 nm were fabricated by photolithography and wet etching.The experiment results show that the light output power of LED chips with different microporous structure undercurrent of 20 m A increased by 3.9%,6.76%and4.66%compared with the LED chip with no microporous structure in the ITO layer.It is firmed that the periodic microstructure in the ITO layer can availably promote the output optical power of LED.The uniformity of the current density distribution was promoted by the electrode structure optimised.
作者
崔悦
许英朝
刘春辉
林苗茜
李洋洋
陈浩
CUI Yue;XU Yingchao;LIU Chunhui;LIN Miaoqian;LI Yangyang;CHEN Hao(School of Electrical Engineering and Automation,Xiamen University of Technology,Xiamen 361024,China;School of Optoelectronics and Communication Engineering,Xiamen University of Technology,Xiamen 361024,China;Fujian Key Laboratory of Optoelectronic Technology and Devices,Xiamen University of Technology,Xiamen 361024,China)
出处
《激光杂志》
CAS
北大核心
2021年第4期31-35,共5页
Laser Journal
基金
福建省自然科学基金面上项目(No.2019J01876)
福建省教育厅中青年教师教育科研项目资助省属高校专项(No.JK2017036)
厦门市科技计划项目(No.3502Z20183060)
厦门市科技计划重大项目(No.3502ZCQ20191002)。
