一种具有N埋层的AlGaN/GaN高电子迁移率晶体管

An AlGaN/GaN High-Electron Mobility Transistor with N-Buried Layer

为了进一步提高GaN HEMT器件的击穿电压,并保持低的导通电阻,文中提出了一种具有N型GaN埋层的AlGaN/GaN HEMT。该埋层通过调整器件的电场分布,降低了高场区的电场峰值,从而降低器件关断时的泄漏电流。该埋层使得栅漏之间的横向沟道电场分布更加均匀,提高了器件的击穿电压。通过Sentaurus TCAD仿真发现,N型GaN埋层可以明显改善器件的击穿电压。相比于传统结构530 V的击穿电压,新结构的击穿电压达到了892 V,提高了68%。此外,N型GaN埋层没有影响到器件的导通特性,使得器件保留了低的特征导通电阻。以上结果说明,该结构在功率器件领域具有良好的应用前景。

In order to further improve the breakdown voltage of GaN HEMT and keep low on-resistance,an AlGaN/GaN HEMT with an N-type GaN buried layer is proposed.The buried layer reduces the peak value of the electric field in the high field region by adjusting the electric field distribution of the device,thereby reducing the leakage current when the device is off-state.The horizontal electric field distribution in channel between the gate and drain is more uniform,which improves the breakdown voltage of device.The Sentaurus TCAD simulation demonstrates that the N-type GaN buried layer can significantly improve the breakdown voltage of the device.The breakdown voltage of the new structure reaches 892 V,which is 68%higher than the 530 V breakdown voltage of the traditional structure.The buried GaN layer has no effect on the on-state characteristics of the device,so that the device retains low on-resistance.These results indicate that the proposed structure has a good application prospect in the field of power devices.