用于太赫兹成像的CMOS肖特基二极管三维结构研究

Three-dimensional structure analysis of Schottky barrier diode in CMOS technology for terahertz imaging

提出了一种简单、科学、有效的高截止频率肖特基势垒二极管设计方法。通过SMIC 180 nm工艺制备的肖特基二极管的截止频率为800 GHz,分析测试结果和仿真数据优化后的肖特基势垒二极管截止频率可以达到1 THz左右。完成了包括天线、匹配电路和肖特基势垒二极管的集成探测器,在220 GHz下其测试响应率可达130 V/W,等效噪声功率估计为400 pW/√Hz。完成了陶瓷瓶内不可见液面的成像实验并取得了良好的效果。

A simple and effective design method for high cut-off frequency Schottky barrier diode is proposed and implemented.The cut-off frequency of the processed Schottky barrier diode is about 800 GHz,which can reach about 1 THz with the optimized parameters through the test results and simulation data in SMIC 180 nm process.The integrated detector including antennas,matching circuit and Schottky barrier diode is completed,whose tested responsivity could achieve 130 V/W and noise equivalent power is estimated to be 400 pW/√Hz at 220 GHz.The imaging experiment of invisible liquid surface in ceramic bottles has been completed and good results have been achieved.