大气压等离子体处理对芥菜生长初期特性的影响

EFFECTS OF PLASMA TREATMENT UNDER ATMOSPHERIC PRESSURE ON MUSTARD’S EARLY GROWTH CHARACTERISTICS

等离子体种子预处理技术是一个新兴的生物工程研究方向,具有广阔的前景。为了具体研究常压冷等离子体预处理芥菜种子的机理和应用,本试验中,利用自行搭建的大气压氩气交流放电等离子体射流源对芥菜种子进行预处理,放电电压为1 200~1 800 V,处理时间为8~90 s的条件下对种子进行处理。处理后的种子与对照组进行培养,主要对其发芽速度、发芽率、幼苗根长以及对干旱及弱光胁迫的响应几个方面进行了对比。得出结论:当放电电压为1 200 V、1 400 V、1 600 V,处理时间为8 s、30 s、60 s、90 s时的处理对种子的发芽速度有明显的促进作用,等离子体处理对种子发芽率未发现明显影响;除处理参数为1 400 V、60 s条件的组别外,其余所有处理组的幼苗根长相比对照组幼苗根长均有优势;当放电电压为1 400 V,处理时间为60 s时,等离子体处理对干旱胁迫下芥菜植株的生长有明显的促进作用。芥菜种子经本试验条件下放电等离子体处理后,对弱光胁迫的响应没有明显区别。

The plasma seed pretreatment technology is an emerging bioengineering research direction with broad prospects.In this paper,the mustard seeds were pretreated by the argon plasma jet with the discharge voltage of 1 200~1 800 V,and the treatment time of 8~90 s,respectively,in order to study the mechanism and application of mustard seeds pretreated by atmospheric cold plasma.All the seeds were cultured under the same circumstance,then the germination speed,germination rate,seedling root length,and the response to drought and low light stress were compared between the treated seeds and the control group.The results showed that when the discharge voltage was 1 200 V,1 400 V,and 1600 V,the treatment time was 8 s,30 s,60 s,and 90 s,the treatment had a significant promotion effect on the seed germination speed,but not on the seed germination rate.Except for the group pretreated by the plasma with the discharge voltage of 1 400 V and the treatment time of 60 s,the root length of all treatment groups was superior to that of the control group.When the discharge voltage was 1400 V and the discharge time was 60 s,the plasma treatment could obviously promote the growth of mustard plants under the drought stress.No significant responses to the low light stress were found after the mustard seeds treated with the discharge plasma under the conditions with the discharge voltage of 1400 V and the discharge time of 60 s.