氯硅烷吸收HCl工艺的模拟

Process Simulation of HCl Absorption by Chlorosilane

采用ASPEN plus软件对改良西门子法制备多晶硅工艺中的HCl吸收过程进行了模拟。提高压力至11bar以上,降低温度至-40℃以下,有利于H 2纯度提升至85%(w)以上。同时分析了压力、吸收剂量和温度,以及吸收剂组成等对吸收效果的影响。在不同温度和压力下,分别计算了HCl在SiHCl_(3)和SiCl_(4)中的溶解度。虽然HCl在SiHCl_(3)中比SiCl_(4)中的溶解度高,但由于SiHCl_(3)挥发度比SiCl_(4)小,所以随着吸收剂中SiHCl_(3)增多,吸收后的H 2纯度反而会降低。

The ASPEN plus software was used to simulate the HCl absorption process in the modified Siemens process for preparing polysilicon.Increasing the pressure to above 11bar and lowering the temperature to below-40℃will help increase the purity of H 2 to 85%(w).At the same time,the effects of pressure,absorbed dose,temperature,and absorbent composition on the absorption effect are analyzed.At different temperatures and pressures,the solubility of HCl in SiHCl_(3) and SiCl_(4) was calculated.Although the solubility of HCl in SiHCl_(3) is higher than that in SiCl_(4),the volatility of SiHCl_(3) is lower than that in SiCl_(4).As SiHCl_(3) in the absorbent increases,the purity of H2 after absorption will decrease instead.