摘要
We demonstrate digital and analog devices with an Ag/MPS_(3)/Au structure based on layered MPS_(3)(M=Mn,Co,Ni)2 D materials.All devices show the bipolar behavior of resistive switching.In addition,Ag/MnPS_(3)/Au and Ag/NiPS_(3)/Au devices show synaptic characteristics of potentiation and depression.The digital and analog characteristics of resistance states enable Ag/MPS_(3)/Au devices to work as both binary memory and artificial synapse devices.The Ag/MPS_(3)/Au memory devices are promising for applications of flexible eye-like and brain-like systems on a chip when they are integrated with photodetectors and FETs composed of full MPS_(3) materials.
作者
赵贵华
王力
柯曦
虞志益
Guihua Zhao;Li Wang;Xi Ke;Zhiyi Yu(School of Electronics and Information Technology,Sun Yat-sen University,Guangzhou 510006,China;School of Microelectronics Science and Technology,Sun Yat-sen University,Zhuhai 519082,China;School of Materials and Energy,Guangdong University of Technology,Guangzhou 510006,China;School of Chemistry and Chemical Engineering,Neijiang Normal University,Neijiang 641100,China)
基金
Project supported by the National Key R&D Program of China(Grant Nos.2017YFA0206200 and 2018YFB2202601)
the National Natural Science Foundation of China(Grant Nos.61674173,61834005,and 61902443)。
