埋沟型源跟随晶体管对噪声的优化研究

Study on Noise Optimization of Buried Channel Source Follower Transistor

噪声问题是影响CMOS图像传感器图像的最主要问题之一,随着集成电路制造工艺技术的发展和不断进步,源极跟随器(SF)晶体管的栅极面积持续缩小会导致RTS噪声恶化。本文介绍了一种采用掩埋沟道工艺的CMOS图像传感器,通过对掩埋沟道工艺优化,可以使像素的随机电报信号噪声大幅降低30%以上,大幅提高了图像传感器的信噪比。

Noise is one of the most important problems which will impact the image of CMOS image sensor performance.With the development of semiconductor manufacturing technology,the continuous shrink of gate length of SF transistor will lead to the deterioration of RTS noise.This paper introduces a CMOS image sensor using buried channel technology.By optimizing the buried channel technology,the random telegraph signal noise of pixels can be greatly reduced by more than 30%,and the signal-to-noise ratio of image sensor is greatly improved.