高可靠性无铝有源层808 nm半导体激光器泵浦源

High Reliable Al-Free 808 nm Semiconductor Laser Diode Pump Source

针对高功率808 nm激光器泵浦源的应用需求,设计并制备了InGaAsP/GaInP材料体系的无铝有源区半导体激光器。使用双非对称的限制层及波导层结构,降低了P侧材料的热阻及光吸收。优化了金属有机化学气相沉积(MOCVD)中As和P混合材料的生长条件,制备出界面陡峭的四元InGaAsP单晶外延薄膜。制作的激光器室温测试阈值电流为1.5 A,斜率效率为1.26 W/A,10 A下的功率达到10.5 W,功率转换效率为58%。连续电流测试最大功率为23 W@24.5 A,准连续电流测试最大功率为54 W@50 A,没有产生灾变性光学损伤(COD)。在15 A电流加速老化下,激光器工作4200 h未出现功率衰减及COD现象,说明制备的无铝有源区808 nm激光器具有高可靠性的输出性能。

For 808 nm high power laser used as pump source,Al-free active-region laser diode was designed and fabricated,consisting of InGaAsP/GaInP.In this work,a double asymmetric structure of cladding and waveguide layers to reduce the thermal resistance and optical loss of P-side layers were proposed.By optimizing the MOCVD growth of As and P hybrid material,InGaAsP single-crystal epitaxial film with steep interface was fabricated.The threshold current is 1.5 A at room temperature and the slope efficiency is 1.26 W/A.The output power is 10.5 W at 10 A and the power efficiency is 58%.Under continuous wave(CW)operation,the maximum output power is 23 W@24.5 A,while it can reach 54 W@50 A under quasi continuous wave(QCW)mode without catastrophic optical damage(COD).No power degradation or COD occurred for accelerated aging over 4200 h at 15 A,showing high long-term reliability of Al-free active-region 808 nm laser diode.