摘要
开展了416 nm纳秒脉冲激光对CCD的损伤实验,观察到了CCD从点损伤到线损伤,再到面损伤的过程,并计算出了点损伤、线损伤和面损伤所对应的损伤能量密度阈值分别为16.7 mJ/cm^(2)~71.9 mJ/cm^(2)、61.0 mJ/cm^(2)~207.8 mJ/cm^(2)和352.6 mJ/cm^(2);通过对不同损伤状态CCD的损伤点表面显微图像的分析,以及不同损伤状态对应的CCD各电极之间电阻值的测量,得出不同损伤状态主要由二氧化硅绝缘层材料相变引起电阻值改变所产生;COMSOL软件仿真显示CCD各层最先产生熔融的是二氧化硅绝缘层,能量密度为420 mJ/cm^(2),与实验结果相接近。实验结果证明了CCD损伤机理分析方法的正确性。
The damage experiment of 416 nm nanosecond pulsed laser to charge-coupled device(CCD)was carried out.The process from point damage to line damage and then to surface damage was observed.The damage energy density thresholds corresponding to point damage,line damage and surface damage were calculated to be 16.7 mJ/cm^(2)~71.9 mJ/cm^(2),61.0 mJ/cm^(2)~207.8 mJ/cm^(2) and 352.6 mJ/cm^(2),respectively.Through analyzing the microscopic images of the damage point surface of CCD in different damage states and measuring the resistance values between CCD electrodes corresponding to different damage states,it was concluded that the different damage states were mainly caused by the different changes of resistance values caused by the phase change of silicon dioxide insulating layer material.Through simulation of COMSOL software,it was concluded that the silicon dioxide insulating layer was the first layer to melt in each layer of CCD,and the energy density was 420 mJ/cm^(2),which was close to the experimental results and proved the correctness of the analysis of CCD damage mechanism.
作者
欧渊
石根柱
李点点
吕勇
牛春晖
OU Yuan;SHI Genzhu;LI Diandian;LYU Yong;NIU Chunhui(Institute of Systems Engineering,Academy of Military Sciences,Beijing 100081,China;School of Instrumental Science and Photoelectric Engineering,Beijing Information Science and Technology University,Beijing 100192,China)
出处
《应用光学》
CAS
CSCD
北大核心
2021年第3期534-541,共8页
Journal of Applied Optics
基金
国防预研基金。
关键词
电荷耦合器件
光电对抗
损伤能量密度阈值
材料相变
charge coupled device
photoelectric countermeasure
damage energy density threshold
material phase change