InGaAs/GaAsP应变补偿多量子阱MOCVD生长

Growth of InGaAs/GaAsP Strain-compensated Multiple Quantum Wells via MOCVD Technology

利用金属有机化学气相沉积技术在GaAs衬底上开展了大失配InGaAs多量子阱的外延生长研究。针对InGaAs与GaAs之间较大晶格失配的问题,设计了GaAsP应变补偿层结构;通过理论模拟与实验相结合的方式,调控了GaAsP材料体系中的P组分,设计了P组分分别为0,0.128,0.184,0.257的三周期In_(x)Ga_(1-x)As/GaAs_(1-y)P_(y)多量子阱结构;通过PL、XRD、AFM测试对比发现,高势垒GaAsP材料的张应变补偿可以改善晶体质量。综合比较,在P组分为0.184时,PL波长1043.6 nm,半峰宽29.9 nm,XRD有多级卫星峰且半峰宽较小,AFM粗糙度为0.130 nm,表面形貌显示为台阶流生长模式。

The large mismatched InGaAs multiple quantum wells on GaAs substrates were prepared by metal-organic chemical vapor deposition(MOCVD)technology.In order to solve the large lattice mismatch between InGaAs and GaAs,the GaAsP strain compensation layer structure was designed.And our systematically theoretical and experimental studies were performed upon the composition adjustment of P in the GaAsP materials.The three-periods In_(x)Ga_(1-x)As/GaAs_(1-y)P_(y)multi-quantum wells structures with the P component of 0,0.128,0.184,and 0.257 were prepared.Compared with PL,XRD,AFM testing results of the samples with and without GaAsP layer,it is found that tensile strain compensation of higher barrier GaAsP material could improve the crystal quality.When the content of P was 0.184,the PL wavelength of InGaAs/GaAsP MWQs was 1043.6 nm,the FWHM was 29.9 nm.The XRD peaks had multi-level satellite peaks,and the FWHM of the satellite peaks was small.The AFM roughness was 0.130 nm,and the surface morphology showed a step flow growth mode.