808 nm大功率分布反馈激光器列阵研制

Development of 808 nm High-power Distributed Feedback Laser Array

为提高大功率半导体激光器的泵浦效率,必须降低半导体激光器输出波长随温度的漂移系数。采用MOCVD外延技术、纳米压印和干法刻蚀附加湿法腐蚀等工艺制备了大功率分布反馈激光器列阵。激光器列阵的腔长为1 mm,25℃时中心波长为808 nm,通过测试不同热沉温度下的P-V-I曲线和光谱图,表明当脉冲工作电流为148 A时,激光器列阵的输出功率可以达到100 W,斜率效率为0.9 W/A,光谱的FWHM为0.5 nm,边模抑制比可以达到40 dB,出射波长随温度的漂移系数为0.056 nm/℃,单列阵波长锁定范围可达50℃,总锁定范围100℃。另外还分析了腔面镀膜对波长锁定效果的影响。

In order to improve the pumping efficiency of high-power semiconductor lasers,the drift coefficient of the output wavelength of the semiconductor laser with temperature must be reduced.The high-power distributed feedback laser array is fabricated using MOCVD epitaxial technology,nano-imprinting,dry etching and wet etching.The cavity length of this laser array is 1 mm,and the wavelength is 808 nm at 25℃.By testing the P-V-I curve and spectrogram at different heat sink temperatures,it is shown that when the pulse working current is 148 A,the output power of the laser array can reach 100 W.The slope efficiency is 0.9 W/A.The FWHM of the spectrum is 0.5 nm.The side mode suppression ratio can reach 40 dB.The thermal drift coefficient of the emission wavelength is 0.056 nm/℃.Single-array wavelength lock ranges up to 50℃and total lock ranges 100℃.In addition,the influence of the cavity surface coating on the wavelength locking effect is also analyzed.