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基于硫代水杨酸基电解液的纯铜电化学机械抛光反应机理研究

Investigation on reaction mechanism of thiosalicylic acid based electrolyte for electrochemical mechanical polishing of copper
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摘要 随着国防和电子工业领域的发展,纯铜精密零件对表面粗糙度的要求随之提高.在硫代水杨酸(TSA)的络合作用下,电化学机械抛光(ECMP)可避免加工应力引起的变形并获得低表面粗糙度的纯铜表面,但由于TSA存在多个官能团,其与纯铜材料的反应机理难以阐明.通过对电位动态极化和ECMP试验,优化了工作电位,实现在2 V(饱和甘汞电极为参考电极)下进行ECMP,使工件表面粗糙度减少96.7%;并对试验中生成的缓蚀膜进行X射线能谱(EDS)、傅里叶变换红外光谱(FT-IR)和质谱分析,阐明了纯铜材料与TSA基电解液的反应机理,即2个TSA分子脱质子生成[C12H8(COO)2SO2]2-,[C12H8(COO)2SO2]2-转化为[C14H8O6S]4-,然后[C14H8O6S]4-与铜离子结合形成配位化合物[C14H8O6SCu]2-;此外,在反应产物中检测到[C12H8(COOH)2S2](二硫代水杨酸,DTSA)的存在,为快速合成DTSA提供了新的可能. With the development of national defense and electrical industry fields,precision components have higher requirements on surface roughness of copper.Electrochemical mechanical polishing(ECMP)can avoid deformation caused by machining stress and provide smooth copper surfaces by the complexation of thiosalicylic acid(TSA).However,due to the various functional groups,the reaction mechanism of TSA with copper is difficult to be clarified.The operating potential is optimized through potentiodynamic polarization and ECMP experiments.2 V(SCE as reference electrode)is selected as operating potential and the surface roughness decreases by 96.7%.Furthermore,the chemical composition of corrosion inhibitor film generated on copper surface is analyzed by X-ray energy dispersive spectroscopy(EDS),Fourier transform infrared spectroscopy(FT-IR)and mass spectra to clarify the reaction mechanism.The reaction mechanism is that two TSA molecules are deprotonated generating into the ion[C12H8(COO)2SO2]2-,which turns into the ion[C14H8O6S]4-,and then the ion[C14H8O6S]4-combines with a copper ion into the coordination compound[C14H8O6SCu]2-.Additionally,the existence of[C12H8(COOH)2S2](dithiosalicylic acid,DTSA)provides a new possibility for the rapid synthesis of DTSA.
作者 吴頔 康仁科 牛林 潘博 郭晓光 郭江 WU Di;KANG Renke;NIU Lin;PAN Bo;GUO Xiaoguang;GUO Jiang(Key Laboratory for Precision and Non-Traditional Machining Technology of Ministry of Education, Dalian University of Technology, Dalian 116024, China)
出处 《大连理工大学学报》 EI CAS CSCD 北大核心 2021年第3期221-226,共6页 Journal of Dalian University of Technology
基金 国防基础科研核科学挑战专题(TZ2016006-0103,TZ2016006-0107-02) 辽宁省兴辽英才计划资助项目(XLYC1807230).
关键词 硫代水杨酸 电化学机械抛光 反应机理 thiosalicylic acid electrochemical mechanical polishing copper reaction mechanism
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