C波段连续波200 W GaN内匹配功率管设计与实现

Design and Implementation of a C-Band Continuous Wave 200 W GaN Internally Matched Power Transistor

研制了一款C波段连续波大功率GaN内匹配功率管。设计采用4个12 mm栅宽GaN高电子迁移率(HEMT)管芯合成输出,功率管总栅宽4 mm×12 mm。利用负载牵引(Load-pull)和大信号建模技术提取GaN管芯阻抗,根据管芯阻抗进行匹配电路设计。电路设计充分考虑合成损耗等因素的影响,研制的连续波GaN内匹配功率管在4.4~5.0 GHz频段内输出功率200 W以上,功率增益10 d B以上,功率附加效率超过50%。

A C-band high power continuous wave GaN internally matched transistor has been developed.The power device is combined with four paralleled GaN high electron mobility transistor(HEMT)dies whose gate-width is 12 mm,the total gate-width is 4 mm×12 mm.The transistor impedance is extracted by load-pull measurement and transistor large signal modeling technique,and the matching circuit is designed based on the transistor impedance.The matching circuit design fully considers the influence of synthetic loss.The power device has output power of more than 200 W,power gain of more than 10 d B and power-added efficiency of more than 50%at the frequency range of 4.4-5 GHz.