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VHF 600 W GaN功率模块研制 被引量:1

Research and Manufacture of the VHF 600 W GaN Power Amplifier Module
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摘要 设计了一种基于GaN HEMT的功率放大模块。该模块采用高增益的GaAs单片、GaN小功率管和GaN大功率管三级级联形式。测试结果表明,模块在约220~270 MHz、工作电压46 V、工作脉宽3 ms、工作比30%的条件下,全带内600 W输出,附加效率大于75%,增益大于52 d B。 This article designs a power amplifier module based on GaN HEMT device.The module multi-stage cascade form is composed of a high-gain GaAs monolithic,low-power GaN devices and high-power GaN devices.The results showed that the device presented good performances of output power more than 600 W,more than 75%added efficiency,more than 52 d B power gain in the band of 220-270 MHz under the conditions of 46 V working voltage,3 ms pulse width and 30%duty cycle.
作者 王建浩 刘雪 王琪 戈硕 唐厚鹭 WANG Jianhao;LIU Xue;WANG Qi;GE Shuo;TANG Houlu(Nanjing Electronic Device Institute,Nanjing 210016,China)
出处 《电子与封装》 2021年第5期52-55,共4页 Electronics & Packaging
关键词 GaN功率管 VHF 功率放大模块 长脉宽 高增益 大功率 GaN transistor VHF power amplifier module wide pulse high gain high power
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