期刊文献+

晶面及液体环境对氧化镓研磨过程摩擦学特性的影响研究

Study on the Influence of Crystal Surface and Liquid Environment on the Tribological Properties of Gallium Oxide During Lapping
下载PDF
导出
摘要 目的探讨具有各向异性的氧化镓晶片不同晶面的研磨加工差异。方法通过化学气相沉积法制备了高质量的自支撑金刚石厚膜,采用扫描电镜及拉曼光谱对其进行表征,将其作为摩擦副材料,在三种不同液体环境下研磨β-Ga_(2)2O_(3)晶片的(100)晶面及(010)晶面,比较摩擦学特性的差别。借助三维扫描系统、扫描电镜及EDS能谱,观察与分析了加工后的氧化镓及自支撑金刚石厚膜的表面形貌、成分及磨损机理。结果 (100)晶面及(010)晶面在去离子水环境中的摩擦系数最大,而当液体环境为乙二醇及三乙醇胺溶液时,研磨过程中形成了很薄的化学反应膜,减少了犁沟效应,摩擦系数较小。且在液体环境为三乙醇胺时,加工后氧化镓晶片的(100)晶面及(010)晶面的粗糙度最小。研磨加工后,(010)晶面比(100)晶面的表面粗糙度(Ra)小。结论 (010)晶面与(100)晶面在不同液体环境下研磨加工存在一定的差异性,(010)晶面比(100)晶面更易获得较好的表面质量。加工过程中,磨损机理为先产生二体磨损,一段时间后再形成三体磨粒磨损。 This work aims to investigate the difference of lapping process between different crystal surfaces of anisotropic gallium oxide wafer.High quality self-supporting diamond thick films were prepared by CVD method,which were characterized by SEM and Raman spectroscopy.They were used as tools to lap(100)and(010)crystal surfaces ofβ-Ga2O3 wafers in three different liquid environments to compare the tribological properties.The surface morphology,composition and wear mechanism of the tools were observed and analyzed by means of three-dimensional scanning system,SEM and EDS.The friction coefficients of(100)and(010)crystal surfaces are the highest in deionized water.When the liquid environment is glycol and triethanolamine solution,a very thin chemical reaction film is formed in the process,which reduces the furrow effect and the friction coefficient is small.The results show that the surface roughness of(100)and(010)crystal faces is the lowest when the liquid environment is triethanolamine.The surface roughness Ra of(010)crystal surface is smaller than that of(100)crystal surface after machining.There are some differences between(010)crystal surface and(100)crystal surface in different liquid environment,and(010)crystal surface is easier to obtain better surface quality than(100)crystal surface.In the process of machining,the wear mechanism is that two body wear occurs at first,and then three body wear occurs after a period of time.
作者 冯伟 周海 黄传锦 徐晓明 徐彤彤 夏斯伟 赵雪雅 卢文壮 FENG Wei;ZHOU Hai;HUANG Chuan-jin;XU Xiao-ming;XU Tong-tong;XIA Si-wei;ZHAO Xue-ya;LU Wen-zhuang(School of Mechanical Engineering,Yancheng Institute of Technology,Yancheng 224051,China;Jiangsu Key Laboratory of Precision and Micro-manufacturing Technology,Nanjing University of Aeronautics and Astronautics,Nanjing 210016,China)
出处 《表面技术》 EI CAS CSCD 北大核心 2021年第5期192-197,共6页 Surface Technology
基金 国家自然科学基金(51675457) 江苏省精密与微细制造技术重点实验室开放基金项目资助 江苏省高校优秀科技创新团队(2017_33)。
关键词 氧化镓晶体 晶面 研磨 自支撑金刚石厚膜 摩擦系数 gallium oxide crystal crystal surface lapping self-supporting diamond thick film friction coefficient
  • 相关文献

参考文献4

二级参考文献4

  • 1[1]Mendel E.Polishing of silicon.Solid State Technol,1967,10(8):27
  • 2[3]Steigerwald J M,Murarka S P,Gutmann R J.Chemical mechanical planarization of microelectronic materials.New York:John Wiley & Sons,1996
  • 3[6]Liu Yuling,Zhang Kailiang,Wang Fang.Investigation on the final polishing liquid and technique of silicon substrate in ULSI.The 8th IUMRS International Conference on Electronic Materials,(IUMRS-ICEM 2002) Xi'an,China,2002:500
  • 4[7]Zhang Kailiang,Liu Yuling,Wang Fang.Study on controlling the adsorption state of particle on the polished silicon wafer.2001 6th International Conference on Solid-State and Integrated Circuit Technology Proceedings,2001:464

共引文献52

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部