1200V/600A SiC功率模块的设计与实现

Design and Implementation of a 1200V/600A SiC Power Module

设计并实现了一款1200 V/600 A半桥结构的大功率SiC模块。模块内部通过SiC MOSFET多芯片并联构成。针对传统模块中由于功率回路与驱动回路的耦合而导致的并联芯片不均流问题,将芯片的辅助驱动电极从芯片表面引出,避免了两者的耦合问题。同时借助仿真软件,证明了并联芯片的不均流问题得以改善。将本设计模块与国外同规格的SiC模块进行了电学参数的测试对比,同时与同规格的Si基IGBT模块进行对比。结果表明本设计模块与国外模块相比,静态性能略差,动态性能更优;且SiC模块的损耗比同规格的Si基模块的降低了约51%。对SiC功率模块进行了相关可靠性试验,结果显示样品均未发生失效。

A 1200 V/600 A half bridge high power SiC module was designed and implemented.The module was composed of SiC MOSFET chips in parallel.In order to solve the problem of uneven current sharing in parallel chips due to the coupling of the power loop and drive loop in conventional modules,the auxiliary driving electrode of the chip was led out from the surface of the chip to avoid coupling.At the same time,with the help of the simulation software,the improvement of uneven current sharing of parallel chips was proved.The electrical parameters of the designed module were tested and compared with those of the foreign SiC module of the same specification.Meanwhile,the designed mo dule was compared with the Si-based IGBT module of the same specification.The results show that compared with the foreign module,the static performance of the designed module is slightly worse but the dynamic performance is better.And compared with the Si-based module of the same specification,the loss of the SiC module is reduced by about 51%.The relative reliability tests of the SiC power module were carried out.And the results show that no failure occurs in the samples.