Gate Tunable Supercurrent in Josephson Junctions Based on Bi_(2)Te_(3) Topological Insulator Thin Films

We report transport measurements on Josephson junctions consisting of Bi_(2)Te_(3) topological insulator(TI)thin films contacted by superconducting Nb electrodes.For a device with junction length L=134 nm,the critical supercurrent Ic can be modulated by an electrical gate which tunes the carrier type and density of the TI film.Ic can reach a minimum when the TI is near the charge neutrality regime with the Fermi energy lying close to the Dirac point of the surface state.In the p-type regime the Josephson current can be well described by a short ballistic junction model.In the n-type regime the junction is ballistic at 0.7 K<T<3.8 K while for T<0.7 K the diffusive bulk modes emerge and contribute a larger Ic than the ballistic model.We attribute the lack of diffusive bulk modes in the p-type regime to the formation of p-n junctions.Our work provides new clues for search of Majorana zero mode in TI-based superconducting devices.