碳化硅功率器件的发展与数值建模

近年来,碳化硅、氮化镓等宽禁带半导体材料的发展引起了人们的广泛关注。凭借其高导热性、高击穿电场和可生长天然氧化物的能力,在航天航空及通信等领域得到了广泛应用。然而,碳化硅功率器件在开发中也有一定的局限性,碳化硅功率器件的高界面态成为制约器件性能的主要因素。因此,碳化硅器件还需要更加深入地了解与应用。文章比较了第三代半导体材料碳化硅与第一代元素半导体硅材料的物理特性,并提出了研究碳化硅材料数值分析所需的模型,为今后碳化硅功率器件的研究打下基础。

In recent years,the development of silicon carbide,gallium nitride and other wide band gap semiconductor materials has attracted extensive attention.Because of its high thermal conductivity,high breakdown electric field and the ability to grow natural oxides,it has been widely used in aerospace,communication and other fields.However,there are some limitations in the development of silicon carbide power devices.The high interface state of silicon carbide power devices has become the main factor restricting the performance of devices.Therefore,silicon carbide devices need more in-depth understanding and application.In this paper,the physical properties of the third-generation silicon carbide and the firstgeneration element silicon carbide are compared,and the model for the numerical analysis of silicon carbide is established,which lays a foundation for the future research of silicon carbide power devices.