一种低功耗K频段低噪声放大器

A K-band Low Noise Amplifier with Low Power Consumption

基于0.13μm锗硅(SiGe)双极型互补金属氧化物(Bipolar Complementary Metal Oxide Semiconductor,BiCMOS)工艺,设计制作了一种高增益低功耗K频段低噪声放大器(Low Noise Amplifier,LNA),通过优化晶体管尺寸及利用硅通孔设计高品质因数射极退化电感,降低了LNA噪声。实测结果表明,在1.6 V偏置条件下,该LNA在20 GHz的噪声系数等于1.94 dB,输入1 dB压缩点等于-29.6 dBm;18~21.3 GHz频率范围内,LNA增益大于23.3 dB,S 11和S 22均小于-10 dB。包含偏置电路功耗在内,芯片功耗仅21 mW,优于其他同等噪声系数的K频段SiGe BiCMOS LNA。该LNA可应用于卫星通信等K频段低功耗接收机系统。

A high-gain low power consumption K-band low noise amplifier(LNA)is designed and manufactured based on the 0.13μm silicon germanium(SiGe)bipolar complementary metal oxide semiconductor(BiCMOS)process.By optimizing the size of transistor and using through silicon via to design high quality factor(high-Q)emitter degeneration inductor,LNA noise is reduced.The measured results show that,under the bias condition of 1.6 V,the noise figure of this LNA at 20 GHz is 1.94 dB,and the input 1 dB compression point is-29.6 dBm.In the frequency range of 18~21.3 GHz,the LNA gain is greater than 23.3 dB,and both S 11 and S 22 are less than-10 dB.Including the bias circuit,the DC power consumption of the chip is only 21 mW,which is better than that of other K-band SiGe BiCMOS LNAs with the same noise figure.The LNA can be applied in K-band low power consumption receiver systems such as satellite communication.