热斑晶硅光伏组件I-V曲线分析及特征模拟研究

STUDY ON I-V CURVE ANALYSIS AND CHARACTERISTIC SIMULATION OF SILICON PHOTOVOLTAIC MODULE WITH HOT SPOT

基于大量的具有热斑缺陷的晶硅光伏组件测试结果,将热斑种类归纳为阴影遮挡型热斑和非遮挡型热斑。分析阴影遮挡型热斑组件的I-V曲线特征及原因,发现通过I-V曲线阶梯处线段的斜率k可表征热斑电池的漏电流大小,并结合组件EL测试结果分析了非遮挡型热斑产生的原因。解释影响光伏组件漏电流大小的原因,通过Simulink建立光伏组件仿真模型,验证热斑组件I-V曲线特征与热斑电池片漏电水平的关系,提出通过给正常电池片并联电阻来模拟曲线斜率特征,并给出并联电阻的选择依据,并通过设计实验以k值差异为判断标准验证了该模拟方法的准确性。

Based on the analysis of the test results of a large number of silicon photovoltaic modules with thermal spot defects,the types of thermal spots can be classified into shading thermal spots and non-shading thermal spots.In this paper,the I-V curve characteristics of shadow shading hot spot component is analyzed.It is found that the leakage current of hot spot batteries can be characterized by the slope k at the step of I-V curve.The cause of non-shading hot spot formation is analyzed based on the component EL test results.At same time,the reasons influencing the magnitude of the photovoltaic battery leakage current is explained.The simulation model for these special photovoltaic modules is built by SIMULINK,by which the relation between the hot spot component I-V curve characteristics and hot spots battery leakage level is verified.A new method to simulate the I-V curve slop characteristic by parallel resistance of normal cell is proposed.The selection basis of parallel resistance is also given.Through the design experiment and taking k value differences as the judgment standard,the accuracy of this method is verified.