Ag催化化学腐蚀多晶绒面的制备及其特性研究

STUDY OF PREPARATION AND PROPERTY OF POLYCRYSTALLINE SILICON WAFER BY SILIVER-CATALYZED CHEMICAL ETCHING

该文采用液相两步法成功制备出具有高质量性能的黑硅绒面。当Ag粒子沉积时间为10 s、AgNO3浓度为0.01 mol/L,H2O2浓度为0.9%,黑硅刻蚀时间为120 s时,硅片绒面反射率最小为5.47%;Ag粒子去除阶段,采用碱洗方式去除残余银颗粒的效果要优于酸洗;黑硅纳米绒面重塑阶段,时间控制在90 s时纳米锥大小一致、均匀度最优。

A black silicon wafer with high-quality surface was successful prepared by using a liquid phase two-step process in this paper.With a deposition time of 10 s for Ag particle,AgNO3 concentration of 0.01 mol/L,H2 O2 concentration of 0.9%,and etching time of 120 s,the black silicon wafer exhibits a lowest reflectance of 5.47%.Specifically,by adjusting the etching time of 90 s during the nano-structural black silicon wafer remodeled stage,the size of black silicon nano-cone is distributed uniform with consistent size.