微波宽频段高性能高集成T/R组件设计

Development of Microwave Broadband High-Performance and High-Integration T/R Module

基于微波宽频段有源相控阵系统T/R组件工程化迫切需求,针对传统T/R组件工作频带不够宽、体积尺寸大、稳定性差、移相衰减精度不高等问题,本文设计了一种X-Ku波段宽频段高性能高集成T/R组件。在突破八通道组件架构设计技术、基于LTCC整板的高密度集成设计技术、宽带GaN功放高可靠高效率及散热设计技术、高频宽带高隔离防腔体效应设计技术、组件模块化设计及可制造性设计技术等关键技术基础上,研制出X-Ku波段10~18 GHz八通道T/R组件。组件具有收发放大、幅相控制和安全保护等主要功能,实测结果全频带内输出功率≥23.9 W、噪声系数≤3.52 dB、移相精度≤3.90°(RMS,均方根值)、衰减精度≤0.94 dB(RMS)、驻波≤1.98、效率≥23%。其中,工作带宽指标由之前的单频段10~12 GHz、15~17 GHz拓宽到宽频段10~18 GHz,输出功率由之前的10 W量级提高到20 W量级,噪声系数由之前的4.3 dB提升到小于3.52 dB。本组件具有高频、宽带、高效、高集成的特性,可应用于新型综合传感器雷达系统、多功能综合电子系统等装备中。

Aiming at the urgent need of T/R module engineering in microwave broadband active phased array system and the problems of traditional T/R module,such as insufficient bandwidth,large size,poor stability and low precision of phase shift and attenuation,this paper designs an X-Ku band broadband high-performance and high-integration T/R module.Based on the breakthrough of eight-channel module architecture design technique,the high-density integrated design technique based on LTCC entire board,high reliability and high efficiency and heat dissipation design techniques of broadband GaN power amplifier,high-frequency broadband high isolation cavity effect design technique,modularization design and mass manufacturability design technique,the X-Ku band 10~18 GHz eight-channel T/R module is developed.The module has the main functions of transceiver amplification,amplitude and phase control and safety protection.The measured results show that the output power in the whole frequency band is≥23.9 W,the noise figure is≤3.52 dB,the phase shifting accuracy is≤3.90°(RMS),the attenuation accuracy is≤0.94 dB(RMS),the standing wave ratio is≤1.98,and the efficiency is≥23%.Among them,the working bandwidth index is increased from 10~12 GHz and 15~17 GHz to 10~18 GHz,the output power is increased from 10 W to 20 W,and the noise figure is decreased from 4.3 dB to less than 3.52 dB.This module has the characteristics of high frequency,wide band,high efficiency and high integration.It can be used in new integrated sensor radar system,multi-functional integrated electronic system,etc.