影响PSSD位置分辨因素的蒙特卡罗模拟

Monte Carlo Simulation Affecting PSSD Position Resolution Factors

以粒子与物质相互作用为理论基础,使用FLUKA蒙特卡罗模拟软件分析带电粒子的能量、入射角度、探测器厚度和灵敏面积等因素对位置灵敏硅探测器(PSSD)位置分辨能力的影响。模拟结果表明,随着电子能量的增加,探测器的位置分辨能力变差,当电子能量增大到可以穿过探测器时,位置分辨能力随着能量的增加逐渐提高;对于不同厚度的探测器来说,当电子能量完全沉积在探测器中时,探测器的位置分辨能力基本相同,当电子能量未能完全沉积在探测器中时,厚度较大的探测器位置分辨能力相对较差;探测器的面积有限会影响位置分辨能力;当电子以入射角度α≤45°入射探测器时,探测到的电子位置会沿着入射角度发生偏移,入射角度越大,偏移越明显。

Based on the theoretical basis of the interaction between particles and matter,the influence of charged particle energy,incident angle,detector thickness,and sensitive area on position sensitive silicon detector(PSSD)position resolution is analyzed by using FLUKA Monte Carlo simulation software.The simulation results show that as the electron energy increases,the position resolution capability of the detector becomes worse.When the electron energy increases to pass through the detector,the position resolution capability gradually increases with the increase of energy.For the detectors of different thickness,when the electron energy is completely deposited in the detector,the position resolution ability of the detector is basically the same.When the electron energy is not completely deposited in the detector,the position resolution ability of the detector with a larger thickness is relatively poor.The limited area of the detector will affect the position resolution.When electrons enter the detector at an incident angleα≤45°,the detected electron position will shift.The larger the incident angle,the more obvious the shift.