基于Datasheet的两电平逆变器损耗模型研究

Research on Datasheet-based Loss Model for Two-level Inverter

为进一步提高市电领域中应用广泛的SPWM两电平逆变器输出效率并降低器件损耗,深入分析了双极性调制模式下的两电平无源逆变电源的工作过程,建立了基于数学分析方法的损耗模型并进行了仿真验证。采用基于非理想条件下的CMF10120D型SiC-MOS管与C4D05120A型SiC肖特基二极管(SBD),通过数据提取工具image2data与数据拟合方法获得Datasheet内功率管损耗与漏极电流、结温函数关系式,建立SiC-MOS与SBD的影响因子函数,最终得出两电平逆变器损耗模型。仿真分析表明所建立的模型正确可靠,脉冲宽度相对误差计算控制在0.75%以下,具有实用价值,能够为后续开展实验研究提供理论支撑。

To further improve the output efficiency of SPWM two-level inverter that is widely applied in the commercial power field and reduce device loss,this paper established a loss model by mathematical analysis method with in-depth analysis of the working process of the two-level passive inverter in bipolar modulation mode.With CMF10120D SiC-MOS transistor and C4D05120A SiC Schottky diode(SBD)in non-ideal condition,we obtained the function relational expression of the power tube loss,drain current,and junction temperature in the Datasheet by data extraction tool image2data and data fitting method.Then,we established the influencing factor function of SiC-MOS and SBD and obtained a two-level inverter loss model.Simulation analysis shows that the established model is correct and reliable.The relative error computing of pulse width is controlled under 0.75%,indicating that it is of practical value and that it is able to provide theoretical support for subsequent experimental studies.