摘要
As an emerging two-dimensional(2D)semiconductor material,monolayer MoS2 has recently attracted considerable attention.Various promising applications of this material have been proposed for electronics,optoelectronics,sensing,catalysis,energy storage,and so on.To realize these practical applications,high-quality and large-area MoS2 with controllable properties is required.Among the many different synthesis techniques,epitaxy provides a promising route for producing MoS2 monolayers.Here,we review the epitaxial growth of monolayer MoS2 on various substrates,with a particular focus on large-scale films with large domain sizes and high domain alignments.Finally,we offer perspectives and challenges for future research and applications of this technology.
基金
the National Natural Science Foundation of China(Nos.11834017 and 61888102)
the National Key Research and Development Program of China(No.2016YFA0300904)
the Key Research Program of Frontier Sciences of CAS(No.QYZDB-SSW-SLH004)
the Strategic Priority Research Program of CAS(Nos.XDB30302000 and XDB33010300).
