不同能量质子辐照诱发子电池GaAs退化模拟研究

Theoretical Simulation on Degradation of GaAs Sub-Cells Induced by Proton Irradiation with Different Energies

为了研究空间辐照诱发的子电池GaAs相关参数的退化行为,以三结太阳电池的子电池GaAs为研究对象,开展了不同辐照条件下的质子辐照模拟研究,建立了子电池GaAs结构模型,得到了不同辐照能量和注量下短路电流、开路电压、转化因子、最大功率的退化结果。利用现有实验数据,验证了不同能量质子辐照诱发的子电池GaAs的归一化最大功率随质子注量的退化。结合子电池GaAs在不同辐照条件下的最大功率退化结果,得到了归一化最大功率随位移损伤剂量的退化方程。研究结果表明:质子辐照诱发的辐照缺陷是导致子电池退化的直接原因,子电池GaAs的短路电流、开路电压、转化因子和最大功率随质子注量的增加而逐渐退化。当质子注量大于1×10^(11)cm^(-2)时,子电池GaAs的归一化电学参数的退化幅度与质子注量的对数值近似成正比,电学参数的退化随质子辐照能量的减小而逐渐增加。质子辐照诱发的子电池GaAs的外量子效率在长波长范围内的退化情况比其在短波长范围内的退化情况更严重。

In order to study the degradation behavior of the related parameters of GaAs sub-cells induced by space irradiation,the proton irradiation simulation was carried out under different irradiation conditions,taking GaAs sub-cells of three-junction solar cell as the research object.The structure model of GaAs sub-cells was established and the degradation results of short-circuit current,open-circuit voltage,fill factor and maximum power induced by proton irradiation with different energies and fluences were obtained.The normalized maximum power degradation of GaAs sub-cells induced by proton irradiation versus fluence was verified by the existing experimental data.According to the maximum power degradation results of GaAs sub-cells under different irradiation conditions,the degradation equation of normalized maximum power versus displacement damage dose was obtained.The research results indicate that the irradiation defects induced by proton irradiation directly lead to the degradation of sub-cells,and the short-circuit current,open-circuit voltage,fill factor and maximum power of GaAs sub-cells degrade with the increase of proton fluence.When the proton fluence is more than 1×10^(11)cm^(-2),the degradation degree of the normalized electrical parameters of GaAs sub-cells is directly proportional to the log value of proton fluence.Meanwhile,the degradation of the electrical parameters increases gradually with the decrease of proton irradiation energy.The degradation of the external quantum efficiency of GaAs sub-cells induced by proton irradiation in the long-wavelength range is more serious than that in the short-wavelength range.