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耦合式MEMS微波功率传感器集总参数模型的优化 被引量:1

Optimization of Lumped Parameter Model for Coupled MEMS Microwave Power Sensors
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摘要 耦合式MEMS微波功率传感器的集总参数模型可用于分析并计算器件的微波特性,是设计传感器相关结构尺寸的重要参考依据。针对目前传感器日益复杂化的阻抗匹配结构,对现有的集总参数模型进行了优化,并进行了相关理论推导。实验结果表明,优化后的模型计算出的反射系数最大误差为6.0 dB,插入损耗最大误差为0.7 dB,模型准确度相较于优化前有了明显的提升。因此,优化的集总参数模型对耦合式MEMS微波功率传感器的设计与优化具有一定的应用价值与参考意义。 The microwave characteristics of coupled MEMS microwave power sensor could be analyzed and calculated by the lumped parameter model, which had become an important reference for the design of sensor’s structure and size. For the increasingly complex impedance matching structure of sensors, the lumped parameter model of the sensor was optimized and derived in this work. The measurement results showed that the maximum calculated error of reflection coefficient was 6.0 dB, and the insertion loss was 0.7 dB. The accuracy of the model was obviously improved after the optimization. Therefore, the lumped parameter model optimized in this work had certain application value and reference significance for the design and optimization of coupled MEMS microwave power sensors.
作者 左文 张聪淳 谢嘉诚 王德波 ZUO Wen;ZHANG Congchun;XIE Jiacheng;WANG Debo(College of Elec.and Optical Engineer.&-College of Microelec.,Nanjing Univ.of Posts and Telecommun.,Nanjing 210023,P.R.China)
出处 《微电子学》 CAS 北大核心 2021年第2期230-234,共5页 Microelectronics
基金 国家自然科学基金青年基金资助项目(61704086) 中国博士后科学基金资助项目(2017M621692) 江苏省博士后基金资助项目(1701131B) 南京邮电大学国自基金孵化资助项目(NY215139,NY217039)。
关键词 MEMS 微波功率传感器 集总参数模型 优化 MEMS microwave power sensor lumped parameter model optimization
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  • 1曾大富,刘建华,罗驰.MEMS传感器的真空密封技术[J].微电子学,2005,35(3):268-269. 被引量:1
  • 2DEHE A, KROZER V, FRICKE K, et al. Harmagel intrgrated microwave power sensor [J']. Elec Lett, 1995, 31(25): 2187-2188.
  • 3DEHE A, KROZER V, CHEN B, et al. High- sensitivity microwave power sensor [or GaAs-MMIC Implementation [J]. Elec Lett, 1996, 32(23): 2149- 2150.
  • 4MILANOVIC V, GAITAN M, ZAGHLOUL M E. Micromachined thermocouple microwave detector in CMOS technology [C] // IEEE 39th Midwest symp Circ ~y- Syst. Ames, IA, USA. 1996, 1: 273-276.
  • 5MILANOVIC V, GAITAN M, ZAGHLOUL M E. Micromachined thermoeouple microwave detector by commercial CMOS fabrication [ J ]. IEEE Trans Microwave Theo Tech, 1998, 46(5) : 550-553.
  • 6MILANOVIC V, GAITAN M, BOWEN E D, et al. Thermoelectric power sensor for microwave applications by commercial CMOS fabrication [J]. IEEE Elec Dev Lett 1997, 18(9): 450-452.
  • 7KODATO S, WAKABAYASHI T, ZHUANG Q D, et al. New structure for DC-60GHz thermal power sensor [C] // IEEE MTT-S Microwave Symp Dig. San Francisco, CA, USA. 1996, 2: 871-874.
  • 8KODATO S, WAKABAYASHI T, ZHUANG Q D, et al. New structure for DC-65 GI-Iz thermal power sensor [C] // Int Conf Sol Sta Sensors ~y- Actuators. Chicago, IL, USA. 1997, 2: 1279-1282.
  • 9SCOTT J B, LOW T S, COCHRAN S, et al. New thermocouple-based microwave/millimeter-wave power sensor MMIC techniques in GaAs [J]. IEEE Trans Microwave Theo Tech, 2011, 59(2): 338-344.
  • 10JAEGGI D, BALTES H, MOSER D. Thermoelectric AC power sensor by CMOS technology [J]. IEEE Elec Dev Lett, 1992, 13(7):366-368.

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