摘要
A type of Si-based blocked impurity band photoelectric detector with a planar architecture is designed and demonstrated by a modified silicon semiconductor processing technique.In this route,multiple ion implantation is utilized to ensure the uniform distribution of the P elements in silicon,and rapid thermal annealing treatment is used to activate the P atoms and reduce damages caused by ion-implantation.The fabricated prototype device exhibits an excellent photoelectric response performance.With a direct current(DC)bias voltage of-2.3 V,the device detectivity to blackbody irradiation is as high as 5×10^(13)cm·Hz^(1/2)/W,which corresponds to a device responsivity of nearly 4.6 A/W,showing their potential applications in infrared detection,infrared astrophysics,and extraterrestrial life science.In particular,the developed device preparation process is compatible with that for the CMOS-circuit,which greatly reduces the manufacturing cost.
作者
王超
李宁
戴宁
石旺舟
胡古今
朱贺
Chao Wang;Ning Li;Ning Dai;Wang-Zhou Shi;Gu-Jin Hu;He Zhu(State Key Laboratory of Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;University of Chinese Academy of Sciences,Beijing 100049,China;College of Physics and Optoelectronic Engineering,Hangzhou Institute for Advanced Study,University of Chinese Academy of Sciences,Hangzhou 310024,China;Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering,Changzhou 213164,China;Department of Physics,College of Mathematics and Science,Shanghai Normal University,Shanghai 200234,China;Hangzhou Dianzi University,Hangzhou 310018,China)
基金
the National Natural Science Foundation of China(Grant Nos.11933006,61805060,and 61290304).
