Vertical polarization-induced doping InN/InGaN heterojunction tunnel FET with hetero T-shaped gate

A novel vertical InN/InGaN heterojunction tunnel FET with hetero T-shaped gate as well as polarization-doped source and drain region(InN-Hetero-TG-TFET)is proposed and investigated by Silvaco-Atlas simulations for the first time.Compared with the conventional physical doping TFET devices,the proposed device can realize the P-type source and N-type drain region by means of the polarization effect near the top InN/InGaN and bottom InGaN/InN heterojunctions respectively,which could provide an effective solution of random dopant fluctuation(RDF)and the related problems about the high thermal budget and expensive annealing techniques due to ion-implantation physical doping.Besides,due to the hetero T-shaped gate,the improvement of the on-state performance can be achieved in the proposed device.The simulations of the device proposed here in this work show ION of 4.45×10^(-5)A/μm,ION/IOFF ratio of 10^(13),and SS_(avg)of 7.5 mV/dec in InN-Hetero-TG-TFET,which are better than the counterparts of the device with a homo T-shaped gate(InN-Homo-TG-TFET)and our reported lateral polarization-induced InN-based TFET(PI-InN-TFET).These results can provide useful reference for further developing the TFETs without physical doping process in low power electronics applications.