半导体α-Fe_(2)O_(3)纳米微球的可控合成及气敏性能条件优化

Controlled synthesis ofα-Fe_(2)O_(3) semiconductor nanospheres and optimization of gas sensing performance condition

采用溶剂热的合成路线,制备了α-Fe_(2)O_(3)多级结构的纳米微球。重点考察了α-Fe_(2)O_(3)多级结构纳米微球的可控合成及气敏性能条件优化。结果表明,在气敏测试温度为150℃时,合成温度为150℃,反应时间为12h,HNO3的加入量为5mL,前驱体在300℃下焙烧2h得到的α-Fe_(2)O_(3)纳米微球,其对10×10^(-6) H2S气体的气敏响应值可达到10Ra/Rg,是理想的H2S气敏传感器材料。

Nano-microspheres withα-Fe_(2)O_(3) structure were prepared by solvothermal synthesis.The controllable synthesis ofα-Fe_(2)O_(3) multi-level nanometer microspheres and optimization of gas-sensitive performance conditions were focused.The results shown that when the gas-sensitive test temperature was 150℃,the synthesis temperature was 150℃,the reaction time was 12 h,the amount of HNO3 added was 5 mL,and theα-Fe_(2)O_(3) nanospheres obtained by calcining the precursor at 300℃ for 2 hwere ideal H2S gas-sensitive sensor material,its gas-sensitive response value to10 ppm H2S gas can reach 10 Ra/Rg.