基于杂质分凝技术的隧穿场效应晶体管电流镜

TFET Current Mirror Based on Dopant Segregation Technology

在全耗尽绝缘体上硅(FDSOI)衬底上制备了一种新型隧穿场效应晶体管(TFET),并用相似的工艺方法制备金属-氧化物-半导体场效应晶体管(MOSFET)作为比较,分别基于两种器件构成基本电流镜电路,研究两种器件的基本性能和电路电流传输能力。两种器件均采用杂质分凝技术制备,在源漏与沟道的界面形成了陡峭的杂质分布,TFET也因此具备陡峭的隧穿结。两种器件的载流子输运机制不同,因此温度对电流的影响也不同,此外,不同于MOSFET的单极导通行为,TFET由于源漏两端均为重掺杂,表现为强烈的双极导通行为。测试发现,由TFET构成的电流镜电路的电流传输比高达97%,高于一般的TFET电流镜和实验中用于对比的MOSFET电流镜,且TFET电流镜的输出阻抗较高,约1 MΩ。这为TFET的研发与简单应用提供了参考。

A novel tunneling field effect transistor(TFET) was prepared on fully depleted silicon-on-insulator(FDSOI) substrate. The metal-oxide-semiconductor field effect transistor(MOSFET) was prepared by a similar process for comparison. The basic current mirror circuits were formed based on the two devices respectively to study the basic properties of the two devices and the capability of the circuit current transmission. The TFET and MOSFET were prepared by the dopant segregation technology. The steep impurity distribution was formed at the interface between source-drain and channel, thus the TFET had steep tunneling junction. The carrier transport mechanism of the two devices is different, so the influence of the temperature on the current is also different. In addition, TFET shows a strong ambipolar conduction behavior due to the high doping concentrations at source and drain regions, which is different from the monopolar conduction behavior of the MOSFET. The test shows that the current mirror circuit composed of TFET has a high current transter ratio of 97%,which is higher than the conventional TFET current mirror, and also higher than that of the MOSFET current mirror used in the experiment. And the output impedance of the TFET current mirror reaches about 1 MΩ. It provides reference for the development and simple application of the TFET.