氮气退火对锑掺杂氧化锡薄膜近红外阻隔性能的影响

Influence of Post Annealing in Nitrogen on the Near Infrared Blocking Property of Antimony Doped Tin Oxide Films

采用射频磁控溅射的方法,用96at%SnO_(2)/4at%Sb_(2)O_(3)陶瓷靶在玻璃表面制备了锑掺杂氧化锡(ATO)薄膜。研究了溅射功率、压强和后退火对薄膜近红外阻隔性能的影响,并采用Uv-Vis-NIR透射光谱、霍尔效应测试仪、XRD和SEM等设备对薄膜的性能和结构进行了测试和分析。结果表明,室温沉积的ATO薄膜近红外透光率较高,但在氮气中退火后,不同溅射压强和溅射功率下沉积的ATO薄膜的近红外透光率均显著降低。在氧含量为10%、压强为1.4Pa、溅射功率为200W时,室温下沉积的ATO薄膜在氮气中500℃下退火1h后,550nm处透光率由80.9%升高至85.8%,2000nm处透光率由84.6%下降至23.0%。

Antimony doped tin oxide(ATO)films were deposited on glass substrate by magnetron sputtering using a ceramic target of 96at%SnO_(2)/4at%Sb_(2)O_(3).The effects of sputtering power,pressure and post annealing on the near-infrared(NIR)blocking property of ATO films were investigated.The Uv-Vis-NIR transmission spectra and Hall Effect were measured and the microstructure of the films was analyzed with XRD and SEM.It was demonstrated that the ATO films deposited at room temperature showed relatively high transmittance in NIR region,while after annealing in nitrogen,the ATO films deposited under different sputtering powers and pressures performed obvious decrease in NIR transmittance respectively.For ATO films deposited at a sputtering power of 200 W with a pressure of 1.4 Pa in10%O2 atmosphere,the transmittance at 550 nm increased from 80.9%to 85.8%and that at 1500 nm decreased from 84.6%to 23.0%after annealing at 500℃for 1 hour in nitrogen.