振动环境下碳化硅电容式压力传感器的零漂分析方法

The zero drift analysis method of SiC capacitive pressure sensor under vibration environment

通过时域仿真和振动测试的分析方法,研究分析振动环境下碳化硅(SiC)电容式压力传感器的零漂。在振动仿真中,将频域信号转换成时域信号,采用有限元分析软件ANSYS,对碳化硅电容式压力传感器进行正弦扫描、随机振动和冲击仿真分析,从形变计算得到传感器的仿真零漂。在振动测试中,分别在传感器施加随机振动、正弦扫描和冲击等载荷,测试得传感器振动前后的电压,计算出测试零漂。研究结果表明冲击振动环境中传感器的零漂最大,正弦扫描振动环境中传感器的零漂最小。当传感器的最小固有频率远大于最大振动频率时,研究发现振动试验的零漂主要与振动量级有关。

Through time-domain simulation and vibration test analysis methods,the zero drift of silicon carbide(SiC)capacitive pressure sensors under vibration environment is researched and analyzed.In the vibration simulation,the frequency domain signal is replaced with the time domain signal,and the finite element analysis software ANSYS is used to perform sine-swept vibration,random vibration and shock simulation analysis on the SiC capacitive pressure sensor,and the simulation zero drift of the sensor is obtained from the deformation calculation.In the vibration test,random vibration,sine-swept vibration and shock are respectively applied to the sensor.By testing the voltage of the sensor before and after vibration,the test zero drift is calculated.The findings of this study show that the zero drift of the sensor is the largest in the shock vibration environment,and the smallest in the sine-swept vibration environment.A probable explanation is that the zero drift is mainly related to the magnitude of vibration when the minimum natural frequency of the sensor is much greater than the maximum vibration frequency.