基于Oxide有源层四次光刻工艺中光刻胶的灰化特性研究

The Study of Ashing Properties on Photoresist in Four Mask Process Based on Oxide Active Layer

在基于Oxide有源层四次光刻工艺中,研究了增强型电感耦合等离子体干法刻蚀设备对光刻胶的灰化特性。通过正交实验分析了O2流量、功率和压力对光刻胶灰化速率、均一性和横向、纵向损失量的影响趋势。实验结果表明,O_(2)流量对光刻胶纵向损失影响最大,当O2流量为6000 mL/min时,纵向损失量(vertical loss)达到最大。功率对光刻胶横向损失影响(CD loss)最大,当功率为32 kW时,横向损失量最小。在此基础上进一步优化工艺参数,当腔室压力为1.3 Pa,灰化时间为40 s时,CD loss为1.36μm, Vertical loss为0.84μm, C/V值最优。

In this paper, we study the effect of enhanced inductively coupled plasma dry etching equipment(planer inductively coupled plasma, PICP) on the ashing properties of photoresist in a four mask process based on Oxide technology.The influence of oxygen flow, power, pressure on ashing rate, uniformity, critical dimension loss(CD loss),and vertical loss of photoresist was evaluated via the orthogonal experiment.The experimental results show that the oxygen flow and power have a significant effect on vertical loss and CD loss, respectively.When the oxygen flow is 6000 mL/min, the vertical loss reaches the maximum;when the power is 32 kW,the CD loss reaches the minimum.Besides, when the chamber pressure and the ashing time are 1.3 Pa and 40 s, the CD loss and the vertical loss are 1.36 μm and 0.84 μm, and the value of CD loss/vertical loss is optimal.