基于HVCMOS工艺的H桥驱动电路版图设计

H-bridge driver circuit layout design based on HVCMOS technology

介绍了基于HVCMOS工艺的低成本、高集成度、强驱动性能功率集成电路(Power IC,PIC)H桥的设计实现。建立的金属互连线评估模型可在设计早期对H桥物理版图方案进行优差性判断,不依赖设计后仿真,从而提高设计效率。H桥不同互连线设计方案的比较结果表明,多插指阵列器件互连线(M2及以上层金属)与器件本体的金属层M1垂直、梯形状互连结构,能够提高互连线沿电流流向的有效长宽比,减小寄生电阻。

The design and realization of a H-bridge which is power integrated circuit(Power IC,PIC)and based on the HVCMOS process with low cost,high integration and strong driving performance is introduced.The established metal interconnection evaluation model can judge the H-bridge physical layout in the early stage of the design and does not rely on post-design simulation,thereby improving design efficiency.The comparison result of different interconnection design of H-bridge shows that the interconnection of multi-finger array device(M2 layer and above metal)is perpendicular to the metal layer M1 of the device and ladder-shaped structure can improve the effective aspect ratio of the interconnection along the current flow direction,thus reduce parasitic resistance.