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微电子器件材料和工艺的专利分析 被引量:2

Patent Analysis of Materials and Processes for Microelectronic Devices
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摘要 [目的/意义]面向我国信息化战略和集成电路重大需求,基于专利文献分析把握微电子器件材料和工艺的发展现状和趋势。[方法/过程]以德温特世界专利索引数据库2000-2020年的专利为基础,从三个层次进行专利分析:(1)宏观上对专利数量、时间趋势等进行基本统计分析;(2)中观上对专利国家/地区、专利权人以及研发团队合作关系等进行关联分析;(3)微观上利用Citespace分析关键材料和工艺的主题演化进程和发展趋势。[结果/结论]美国微电子器件材料和工艺专利量领先全球;全球形成以IBM-三星、日本日立和荷兰飞利浦为中心的美日欧三个研发团体,且美日间合作关系较强;传统复合材料、化合物材料已趋于成熟,新型半导体材料、纳米线、纳米管以及石墨烯及其衍生物等材料是未来研发重点。本文能弥补未总结微电子器件关键材料和工艺的研究空白,为我国相关技术发展提供参考和启示。 [Purpose/significance]Facing China's informatization strategy and major needs for integrated circuits,grasp the development status and trends of microelectronic device materials and processes based on patent document analysis.[Method/process]Based on the patents of the Derwent World Patent Index database from 2000 to 2020,the patent analysis is carried out from three levels:(1)Basic statistical analysis of the number of patents,time trends,and technology life cycles at a macro level;(2)In the middle level,conduct correlation analysis on patent application areas,patent holders,and R&D team cooperation relationships;(3)Use Citespace to analyze the theme evolution process and development trend of key materials and processes at the micro level.[Result/conclusion]The number of US microelectronic device materials and process patents leads the world;three R&D groups in the United States,Japan and Europe are formed around the world,with IBM-Samsung,Hitachi of Japan,and Philips of the Netherlands as the center,and the cooperation between the United States and Japan is strong;traditional composite materials and compound materials have become mature,and new semiconductor materials,nanowires,nanotubes,graphene and its derivatives and other materials are the focus of future research and development.This article can fill up the research gaps in the key materials and processes of microelectronic devices that have not been summarized,and provide reference and enlightenment for the research and development of related technologies in China.
作者 许景龙 刘佳 XU Jinglong;LIU Jia(Library of Party School of the Guangdong Provincial Committee of CPC(Guangdong Institute of Public Administration),Guangzhou 510053;Wuhan Documentation&Information Center of Chinese Academy of Sciences,Wuhan 430071;Hubei Key Laboratory of Big Data in Science and Technology,Wuhan 430071;Department of Library,Information and Archives Management,School of Economics and Management,University of Chinese Academy of Sciences,Beijing 100190)
出处 《中国发明与专利》 2021年第6期24-35,共12页 China Invention & Patent
基金 中国科学院青年创新促进会项目(项目编号:E1ZG081001)研究成果之一 湖北省“十四五”高新技术产业技术预测和发展规划研究项目(项目编号:2020EDA005)研究成果之一。
关键词 微电子器件 场效应晶体管 新型存储器 新型传感器 专利分析 microelectronics field effect transistor new memory new sensor patent analysis
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