摘要
基于目前的研究现状,简述了场发射性能的影响因素和评价标准,系统论述了优化Si C纳米结构场发射阴极的方法及研究进展。其中具有高长径比的针尖状Si C纳米结构,通过掺杂、表面修饰、空间分布和复合结构等处理后可进一步增强其场发射性能。
Based on the current research status, the influencing factors and evaluation criteria of field emission performance are summarized, and the methods and research progress for improving the field emission performance of Si C nanostructures are systematically discussed. The field emission performance of SiC nanostructures with high aspect ratio and sharp tips can be further enhanced by doping, surface decoration, spatial distribution and composite structure.
作者
祝震宇
孙梓瀚
王霖
ZHU Zhenyu;SUN Zihan;WANG Lin(School of Materials and Chemical Engineering,Ningbo University of Technology,Ningbo 315211,China)
出处
《宁波工程学院学报》
2021年第2期23-28,共6页
Journal of Ningbo University of Technology
基金
浙江省自然科学(青年)基金(LQ17E020002)。
关键词
Si
C
纳米结构
场发射
SiC
nanostructures
field emission
