(NH_(4))_(2)S侧壁钝化提高GaN基Micro-LEDs光电性能

Enhanced the Photoelectric Performance of Ga N-based Micro-LEDs through(NH)S Sidewall Passivation

作为新一代显示技术,GaN基Micro-LEDs具有低功耗、高亮度、高分辨率和快速响应的优点。但是,侧壁缺陷引起的表面非辐射复合严重影响Micro-LEDs的发光效率。本文利用(NH_(4))_(2)S来钝化GaN微米柱侧壁,形成稳定的Ga-S取代不稳定的Ga-O和Ga-OH,修复侧壁缺陷,抑制电子空穴侧壁缺陷处发生的非辐射复合。(NH4)2S钝化20分钟之后,Micro-LEDs侧壁缺陷修复效果最明显。在40mA的电流下,LOP和EQE分别提高23.89%和23.95%,能量转换效率提升明显。(NH_(4))_(2)S处理后形成的侧壁钝化层一方面可以有效减少载流子非辐射复合,另一方面有效防止氧或水蒸气在侧壁表面再次扩散发生反应,为GaN基Micro-LEDs光电性能提升提供新的方向。

As the new display technology,Ga N-based Micro-LEDs have the advantages of low power consumption,high brightness,high resolution and fast response.However,non-radiative recombination caused by sidewall defects seriously affects the luminous efficiency of Micro-LEDs.In this paper,(NH_(4))_(2)S is used to passivate the sidewalls of Ga N micron pillars.By forming stable Ga-S instead of unstable Ga-O and Ga-OH to repair sidewall defects,thereby inhibiting the non-radiative recombination of electrons and holes.After 20 minutes of(NH4)2 S treatment,Micro-LEDs had the best sidewall defect repair.At the current of 40 m A,LOP and EQE increased by 23.89% and 23.95%,respectively.The sidewall passivation layer formed after(NH_(4))_(2)S treatment can effectively reduce the non-radiative recombination of carriers.At the same time,it effectively prevents the secondary diffusion and reaction of oxygen or water vapor on the surface of the side wall.Therefore,this work will provide a new direction for improving the photoelectric performance of Micro-LEDs.