HVPE法制备碳掺杂半绝缘氮化镓晶圆片

C-doped Semi-insulating GaN Grown by HVPE

利用氢化物气相外延法(HVPE)生长,以甲烷为掺杂源,成功制备获得四英寸自支撑半绝缘氮化镓(GaN)晶圆片。所使用掺杂气体为浓度为5%的甲烷气体,混合于N_(2)载气中。所制备晶圆片厚度可达800μm以上,表面无裂纹,表明粗糙度在0.6 nm以下。(002)和(102)晶面X射线衍射摇摆曲线的半峰宽均小于100 arcsec,普遍在为40~60 arcsec,曲率半径可达20 m及以上,位错密度低于10^(6)/cm^(2),测得电阻率大于10^(9)Ω-cm。

Four-inch self-separated semi-insulating gallium nitride(GaN)wafers were successfully obtained by Hydride Vaper Phase Epitaxy(HVPE)growth with methane as the doping source.The doping gas used is methane gas with a concentration of 5%,mixed with N_(2) carrier gas.The thickness of the wafer can reach more than 800μm,and the surface roughness is lower than 0.6 nm without cracks.(002)and(102)of the X-ray diffraction rocking curve half peak width of less than100 arcsec typically were 40 to 60 arcsec,curvature radius is more than 20 m,the dislocation density is lower than 10^(6)/cm^(2),the resistivity was measured to be greater than 10^(9)Ω-cm.