基于等离子增强技术石墨衬底上低温制备GaN薄膜及其性能的实验研究

The Experimental Study of Low-Temperature Grown GaN Films on Graphite Substrate Based on Plasma-Enhanced Technology

采用电子回旋共振等离子体增强金属有机物化学汽相沉积技术在石墨衬底上低温沉积制备出高质量GaN薄膜,采用三甲基镓(TMGa)和氮气(N_(2))作为制备GaN的反应源。采用X射线衍射分析、电子扫描显微镜以及室温光致发光谱测试系统对不同制备温度的GaN薄膜特性进行系统的表征研究。结果表明,在优化的制备工艺条件下(制备温度450℃时),高C轴择优取向且形貌致密均匀的GaN薄膜成功沉积于石墨衬底上,其近带边紫外发光峰(NBE)占主导地位,表明具有优异的光学性能。

The high-quality GaN thin films were prepared on graphite substrate by ECR-PEMOCVD technique with low-temperature deposition.In this study, the trimethylgallium(TMGa) and nitrogen(N_(2)) were used as reaction sources for preparing GaN as-grown films.The properties of GaN film at different preparation temperatures were systematically studied using X-ray diffraction analysis, electron scanning microscopy, and room temperature photoemission spectroscopy test systems.The results show that the dense uniform GaN films with high C-axis orientation are deposited successfully on the graphite substrate at a deposition temperature of 450℃.And the band-edge ultraviolet emission peak is dominant, which indicates excellent optical properties of the as-grown GaN films.