AlO_(x)(PI)/HfO_(x)界面调控的阻变开关行为

Research on the resistive switching behavior modulated by AlO_(x)(PI)/HfO_(x) interface

为了改善阻变开关层在厚度小于10 nm下的氧化铪(HfO_x)基阻变存储器的电学性能,提高器件开关均匀性并增大器件开关比,在开关层中加入聚酰亚胺(polyimide, PI)薄层,采用光刻工艺制备Ti/AlO_(x)(PI)/HfO_(x)/Pt和Ti/HfO_(x)/Pt结构的阻变存储器.利用扫描电子显微镜表征分析器件的电极形貌,通过电学测试分析器件的I-V特性和稳定性,采用线性拟合和电场模拟的方法分析Ti/PI/HfO_x/Pt结构器件的阻变开关机理.结果显示,Ti/PI/HfO_(x)/Pt结构器件无需激活过程,其开关比高达2 000,且复位均匀性优越,数据保持时间高于10~3 s,充分展现了PI对HfO_(x)与Ti电极界面调控的优势.

In order to improve the electrical performance of the hafnium oxide(HfO_(x))-based resistive random access memory with a thickness of less than 10 nm in the resistive switching layer,enhance the switching uniformity of the device and increase the switching ratio of the device,thin layer of polyimide is added to the switching layer and Ti/AlO_(x)(PI)/HfO_(x)/Pt and Ti/HfO_(x)/Pt structure resistive random access memory are successfully prepared via photolithography technique.The surface morphology of the device is characterized by scanning electron microscope(SEM).The I-V characteristics and stability are characterized through electrical behavior test.The resistance switching mechanism of Ti/PI/HfO_(x)/Pt device is studied by linear fitting and electric field simulation.Results show that the device does not require an activation process,possesses an excellent reset uniformity,exhibits a retention time of more than 10~3 s with the switching ratio of the device up to 2000.Which demonstrates the advantages of polyimide(PI)for HfO_(x) and Ti electrode interface regulation.