摘要
Photoluminescence(PL)was investigated as functions of the excitation intensity and temperature for a coupling surface quantum dots(SQDs)structure which consists of one In_(0.3)Ga_(0.7)As SQDs layer being stacked on multi-layers of In_(0.3)Ga_(0.7)As buried quantum dots(BQDs).Accompanied by considering the localized excitons effect induced by interface fluctuation,carrier transition between BQDs and SQDs were analyzed carefully.The PL measurements confirm that there is a strong carrier transition from BQDs to SQDs and this transition leads to obvious different PL characteristics between BQDs and SQDs.These results are useful for future application of SQDs as surface sensitive sensors.
作者
YANG Ying-li
LIU Zeng-guang
WANG Guo-dong
WANG Ying
YUAN Qing
FU Guang-sheng
杨莹丽;刘增光;王国东;王颖;苑青;傅广生(School of Physics and Electronic Information Engineering,Henan Polytechnic University,Jiaozuo,454000,China;Instrumental Analysis Center,Henan Polytechnic University,Jiaozuo,454000,China;College of Physics Science&Technology,Hebei University,Baoding,071002,China)
基金
supported by the National Natural Science Foundation of China(Nos.U1304608 and 61774053)
the Project of Henan Provincial Department of Science and Technology(No.182102410047)
the Program of Henan Polytechnic University(No.B2014-020)。
