摘要
数控延时线芯片通常被应用于微芯片-微计算机-微电子学的电路设计开发与测试技术中。为了达到高的电阻延迟精度和大量的延迟度,设计一款有小尺寸和优异微波性能的Ga As微波单片集成数控实时延迟线电路。电路芯片选用Ga As PHEMT材料和单片微波集成工艺实现,采用电路与电磁场相结合的方式设计仿真实验,对外延材料进行优化。通过测试,电路比传统设计体现出更更好的回波损耗和更小的回波插入损耗波动,验证了砷化物微波单片集成电路的设计理论,为砷化镓微波集成电路的设计提供了重要线索。
Digital control delay line chip is usually used in microchip-microcomputer-microelectronics circuit design,development and testing technology.In order to achieve high resistance delay precision and a large number of delay degrees,a GaAs microwave monolithic integrated digital control real-time delay line circuit with small size and excellent microwave performance is designed.The circuit chip is manufactured by GaAs PHEMT material and monolithic microwave integration process,and simulation experiments are designed by combining circuit with electromagnetic field to optimize epitaxial materials.Through testing,the circuit shows better return loss and smaller fluctuation of return insertion loss than the traditional design,which verifies the design theory of arsenide microwave monolithic integrated circuit and provides an important clue for the design of gallium arsenide microwave integrated circuit.
作者
王建强
秦水介
WANG Jianqiang;QIN Shuijie(College of Big Data and Information Engineering,Guizhou University,Guiyang 550025,China;Guizhou Key Laboratory of Optoelectronic Technology and Application,Guiyang 550025,China)
出处
《微处理机》
2021年第3期1-5,共5页
Microprocessors