基于GaN FET的LED微显示单片集成技术研究进展

Research Progress of Monolithic Integration Technology of LED Microdisplay Based on GaN FET

发光二极管(LED)微显示技术由于其潜在应用而倍受关注。与主流的基于硅基驱动器的LED微显示技术不同,采用GaN场效应晶体管(FET)驱动的LED微显示技术制作的器件具有可靠性高和制作工艺简单等优势。总结了各种GaN FET驱动LED微显示的器件结构及性能,这些器件结构包括:直接利用LED外延结构制作FET驱动微型LED发光像素的横向集成结构、HEMT驱动微型LED发光像素的横向叠层结构、纳米线GaN FET驱动LED发光像素的垂直叠层结构。对基于GaN FET驱动的LED微显示技术的进展进行了综述。对GaN FET驱动的LED微显示技术的应用前景和研究方向进行了展望。

The light-emitting diode(LED)microdisplay technology has attracted great attention due to its potential applications.Differed from the main LED microdisplay technology based on silicon-based drivers,the device fabricated by the GaN FET-based LED microdisplay technology has advantages such as high reliability and simple fabrication process.The structures and performance of various GaN FET-driving LED microdisplay devices are summarized.The device structures include:the lateral integration structure directly using LED epitaxial structure to make micro-LED light-emitting pixels driven by FETs,the lateral laminated structure of HEMT driving micro-LED light-emitting pixels and vertical laminated structure of nanowire GaN FET driving micro-LED light-emitting pixels.The progress of LED microdisplay technology based on GaN FET driving is reviewed.The application and research direction of GaN FET driving LED microdisplay technology are prospected.