高亮度硅纳米晶发光峰位的调制

Luminescence Peak Modulation of High Brightness Silicon Nanocrystals

镶嵌硅纳米晶的SiO_(2)薄膜(Si-nc∶SiO_(2))是目前主要的硅发光材料。Si-nc发光强度低的缺点阻碍了它的应用,因此寻求一种制备高亮度Si-nc∶SiO_(2)的方法尤为重要。使用氢硅倍半环氧乙烷(HSQ)热退火方法制备高亮度的Si-nc∶SiO_(2),通过控制腐蚀时间改变Si-nc的粒径和发光峰位。采用透射电子显微镜、X射线衍射、光致发光和拉曼光谱等表征Si-nc∶SiO_(2)的结构和性能。将HSQ热退火方法制备的Si-nc∶SiO_(2)样品与蒸镀方法制备的Si-nc∶SiO_(2)进行比较,得出采用HSQ热退火方法制备的Si-nc∶SiO_(2)样品的性能远高于采用蒸镀方法制备的样品的性能,最终获得了发光波长为570 nm(黄光)、610 nm(橙光)和730 nm(红光)的Si-nc∶SiO_(2)。

SiO_(2) thin film embedded with silicon nanocrystal(Si-nc∶SiO_(2))is the main silicon luminescence material at present.The low luminescence intensity of the Si-nc hinders its application,so it is particularly important to find a method to prepare high brightness Si-nc∶SiO_(2).High brightness Si-nc∶SiO_(2) was prepared by using the hydrogen silsesquioxane(HSQ)thermal annealing method,and the particle size and luminescence peak of Si-ncs were changed by controlling the etching time.The transmission electron microscope,X-ray diffraction,photoluminescence and Raman spectroscopy were used to characterize the structure and performance of Si-nc∶SiO_(2).The Si-nc∶SiO_(2) samples prepared by the HSQ thermal annealing method were compared with those prepared by the evaporation method.It is found that the performance of the Si-nc∶SiO_(2) samples prepared by the HSQ thermal annealing method is much better than that of the samples prepared by the evaporation method.Si-nc∶SiO_(2) with emission wavelengths of 570 nm(yellow),610 nm(orange)and 730 nm(red)are finally obtained.