PVA辅助生长大面积连续少层MoS_(2)薄膜

PVA-Assisted Growth of Large-Area Continuous Few-Layer MoS_(2) Films

以MoS_(2)为代表的二维半导体材料是有望用于下一代光电子器件的新兴材料,实现大面积连续二维半导体薄膜材料的制备将促进相关材料的工业应用。在(NH_(4))_(2)MoS_(4)前驱体溶液中添加聚乙烯醇(PVA)提高(NH_(4))_(2)MoS_(4)旋涂薄膜的均匀性,然后在H_(2)气氛下加入硫粉,利用高温热解工艺在SiO_(2)/Si基片上制备了大面积、连续均匀的层状MoS_(2)薄膜。采用光学显微镜、原子力显微镜(AFM)、X射线光电子能谱(XPS)、拉曼光谱、透射电子显微镜(TEM)、扫描电子显微镜(SEM)、紫外可见(UV-Vis)分光光度计以及输出特性曲线对MoS_(2)薄膜的形貌、结构和光电性能进行了表征。结果表明,所制备的少层MoS_(2)薄膜具有良好的结晶性和层状结构,并可实现大面积的薄膜转移。

Two-dimensional semiconductor materials represented as MoS_(2) are emerging materials that are expected to be used in next-generation optoelectronic devices.The realization of the fabrication of large-area continuous two-dimensional semiconductor film materials will promote industrial applications of related materials.The uniformity of the(NH_(4))_(2)MoS_(4) spin-coated film was improved by adding poly(vinyl alcohol)(PVA)to the(NH_(4))_(2)MoS_(4) precursor solution,and then the large-area continuous and uniform MoS_(2) films were prepared on SiO_(2)/Si substrates by high temperature pyrolysis process with sulfur powder in H_(2) atmosphere.The morphology,structure and photoelectric properties of MoS_(2) films were characterized by the optical microscope,atomic force microscope(AFM),X-ray photoelectron spectroscopy(XPS),Raman spectroscopy,transmission electron microscope(TEM),scanning electron microscope(SEM),ultraviolet-visible(UV-Vis)spectrophotometer and output characteristic curve.The result shows that the prepared few-layer MoS_(2) films have good crystallinity and layered structure.Furthermore,the large area few-layer MoS_(2) film can be easily transferred.